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S20U150CT Datasheet, PDF (1/2 Pages) Compact Technology Corp. – Extreme Low VF Trench MOS Schottky | |||
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Extreme Low VF Trench MOS Schottky
FEATURES
⧠Low power loss, high efficiency
⧠Low forward voltage drop
⧠High forward surge capability
⧠High frequency operation
⧠Excellent high temperature stability
⧠Trench MOS Schottky technology
S20U150CT
REVERSE VOLTAGE - 150 Volts
FORWARD CURRENT - 20.0 Amperes
TO-220
MECHANICAL DATA
⧠Case: TO-220
⧠Polarity: As marked
⧠Weight: Approximated 1.86 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25â ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Characteristics
Maximum Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Forward Voltage Drop
IF=5A (TJ=25â)
IF=5A (TJ=125â)
IF=10 A (TJ=25â)
IF=10 A (TJ=125â)
Maximum Reverse Current at Rated VRRM
TJ=25°C
TJ=125°C
Maximum Average Forward Rectified Current
Total device
Per diode
Peak Forward Surge Current,
8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Peak Repetitive Reverse Current at tp=2 µs, 1 kHz,
Operating and StorageTemperature Range
Symbol
VRRM
VRMS
VF
IR
IO
IFSM
IRRM
TJ, TSTG
S20U150CT_V0
1
Value
Unit
150
V
105
V
Typ.
Max.
0.77
-
0.62
-
V
0.89
0.93
0.68
0.75
Typ.
Max.
3
30
µA
4
10
mA
20
A
10
150
A
1.0
A
-65 to +150
°C
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