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S10U150FCT Datasheet, PDF (1/2 Pages) Compact Technology Corp. – Extreme Low VF Trench MOS Schottky
Extreme Low VF Trench MOS Schottky
FEATURES
‧ Low power loss, high efficiency
‧ Low forward voltage drop
‧ High forward surge capability
‧ High frequency operation
‧ Excellent high temperature stability
‧ Trench MOS Schottky technology
S10U150FCT
REVERSE VOLTAGE - 150 Volts
FORWARD CURRENT - 10.0 Amperes
TO-220F
MECHANICAL DATA
‧ Case: TO-220F
‧ Polarity: As marked
‧ Weight: Approximated 1.6 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Characteristics
Maximum Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Forward Voltage Drop
IF=3A
IF=3A
IF=5 A
IF=5 A
(TJ=25℃)
(TJ=125℃)
(TJ=25℃)
(TJ=125℃)
Maximum Reverse Current at Rated VRRM
TJ=25°C
TJ=125°C
Maximum Average Forward Rectified Current
Total device
Per diode
Peak Forward Surge Current,
8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Peak Repetitive Reverse Current at tp=2 µs, 1 kHz,
Operating and StorageTemperature Range
Symbol
VRRM
VRMS
VF
IR
IO
IFSM
IRRM
TJ, TSTG
Value
Unit
150
V
105
V
Typ.
Max.
0.79
-
0.62
-
V
0.89
0.95
0.67
0.75
Typ.
Max.
1
30
µA
2
10
mA
10
A
5
80
A
1.0
A
-65 to +150
°C
S10U150FCT_V0
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