HER501 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – HIGH EFFICIENCY RECTIFIERS(5.0A,50-400V)

Compact Technology
HIGH EFFICIENCY RECTIFIERS
HER501 thru HER508
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 5.0 Ampere
FEATURES
Plastic passivated chip
Super fast switching for high efficiency
High current capability
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification 94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Indicated by cathode band
Weight : 0.04 ounces, 1.2 grams
DO-201AD
A
B
A
C
D
DO-201AD
Dim.
Min.
Max.
A
25.4
-
B
7.20
9.50
C
1.20
1.30
D
4.80
5.30
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
HER
SYMBOL ₅₀₁
VRRM ⁵⁰
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRMS 35
VDC ⁵⁰
Maximum Average Forward
Rectified Current
@TL =75 C ^I(AV)
Peak Forward Surge Current
8.3ms single half sine-wave
IFSM
super imposed on rated load (JEDEC METHOD)
HER HER
502 503
100 200
70 140
100 200
HER
504
300
210
300
HER
505
400
280
400
5.0
200
HER
506
600
420
600
Maximum forward Voltage at 5.0A DC
VF
1.0
1.3
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =100 C
IR
10.0
100
Maximum Reverse Recovery Time (Note 1)
TRR
50
Typical Junction
Capacitance (Note 2)
CJ
75
Typical Thermal Resistance (Note 3)
R0JL
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
NOTES : 1.Reverse Recovery Test Conditions :IF=0.5A,IR=1.0A,IRR=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance junction to Lead.
30
-55 to +150
-55 to +150
HER
507
800
560
800
1.70
75
HER
508
1000
700
1000
UNIT
V
V
V
A
A
V
uA
ns
pF
C/W
C
C
CTC0055 Ver. 2.0
1 of 2
HER501 thru HER508