HER101 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Compact Technology
HIGH EFFICIENCY RECTIFIERS
HER101 thru HER108
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 1.0 Ampere
FEATURES
Plastic passivated chip
Super fast switching for high efficiency
High current capability
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification 94V-0
DO-41
A
B
A
C
D
MECHANICAL DATA
Case : Molded plastic
Polarity : Indicated by cathode band
Weight : 0.012 ounces, 0.34 grams
DO-41
Dim.
Min.
Max.
A
25.4
-
B
4.20
5.20
C
0.70
0.90
D
2.00
2.70
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25̺ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
HER
SYMBOL ₁₀₁
VRRM ⁵⁰
VRMS 35
VDC
50
Maximum Average Forward
Rectified Current
@TL =75 C ^I(AV)
Peak Forward Surge Current
8.3ms single half sine-wave
IFSM
super imposed on rated load (JEDEC METHOD)
HER HER
102 103
100 200
70 140
100 200
HER
104
300
210
300
HER
105
400
280
400
1.0
30
Maximum forward Voltage at 1.0A DC
VF
1.0
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =100 C
IR
1.3
5.0
200
Maximum Reverse Recovery Time (Note 1)
TRR
Typical Junction
Capacitance (Note 2)
CJ
50
20
HER HER
106 107
600 800
HER
108
1000
UNIT
V
420 560 700 V
600 800 1000 _V
A
A
1.70
V
uA
75
ns
10
pF
Typical Thermal Resistance (Note 3)
R0JL
30
C/W
Operating Temperature Range
TJ
-55 to +150
C
Storage Temperature Range
TSTG
-55 to +150
C
NOTES : 1.Reverse Recovery Test Conditions :IF=0.5A,IR=1.0A,IRR=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance junction to Lead.
CTC0051 Ver. 2.0
1 of 2
HER101 thru HER108