CF6N60I Datasheet, PDF (1/5 Pages) Compact Technology Corp. – Switch Mode Power Supply

CF6N60I
DESCRIPTION
• Electronic Ballast
• Electronic Transformer
• Switch Mode Power Supply
1-GATE 栅极 2-DRAIN 漏极
3-SOURCE 源极
FEATURES
• Low Thermal Resistance
• High Iput Resistance
• Fast Switching
• ROHS Compliant
I-PAK
■ MAXIMUM RATINGS（Tc=25℃)
PARAMETER
SYMBOL
VALUE
UNIT
Drain-source Voltage
VDS
600
V
gate-source Voltage
VGS
±30
V
Continuous Drain Current(TC=25℃)
ID
6
A
Drain Current-Pulsed
IDM
24
A
Total Dissipation
PD
50
W
Junction Temperature
Tj
150
℃
Storage Temperature
Tstg
-55-150
℃
Single Pulse Avalanche Energy
EAS
230
mJ
■ ELECTRONIC CHARACTERISTICS（Tc=25℃)
CHARACTERISTICS
SYMBOL TEST CONDITION MIN
MAX UNIT
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250μA
600
V
Gate Threshold Voltage
VGS(TH) VGS=VDS ,ID=250μA
2
4
V
Drain-source Leakage Current
IDSS
VDS=600V,VGS=0V
10
uA
Drain-Source Diode Forward Voltage
VSD
VGS=0V,IS=6A
Gate-body Leakage
Current (VDS = 0)
IGSS
VGS=±30V,VDS=0V
Forward Transconductance
gfs
Vds=10V,ID=3A
0.5
Static Drain-source On
Resistance
Thermal Resistance
Junction-case
RDS(ON)
RthJ-c
VGS=10V,ID=3A
V1.1 2014-01
http://ctc-semicon.com
1.4
±100
1.5
2.3
V
nA
S
Ω
℃/W
P1/5