CGHV27200 Datasheet, PDF (9/11 Pages) Cree, Inc – 200 W, 2500-2700 MHz, GaN HEMT for LTE

CGHV27200-TB Demonstration Amplifier Circuit Bill of Materials
Designator
R1
R2
C1
C2
C3,C9,C15
C4,C10
C5,C11
C6,C12,C16
C7
C8
C13,C17
C14
C18
J1,J2
J3
Description
RES, 1/16 W, 0603, 1%, 150 OHMS
RES, 1/16 W, 0603, 1%, 5.1 OHMS
CAP, 6.2 pF, +/-0.25 pF, 0603, ATC600S
CAP, 27 pF, +/-5%, 0603, ATC600S
CAP, 8.2 pF, +/-0.25 pF, 0603, ATC600S
CAP, 82.0 pF, +/-5%, 0603, ATC600S
CAP, 470 pF, 5%, 100 V, 0603, X7R
CAP, 33000 pF, 0805, 100 V, X7R
CAP, 10 UF, 16V, TANTALUM
CAP, 27 pF, +/-5%, 250 V, 0603, ATC600S
CAP, 1.0 UF, 100 V, 10%, X7R, 1210
CAP, 100 UF, +/-20%, 160V, ELECTROLYTIC
CAP, 33 UF, 20%, G CASE
CONN, SMA, PANEL MOUNT JACK, FLANGE,
4-HOLE, BLUNT POST
CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS
PCB, RO4350, 0.020” THK, CGHV27200
2-56 SOC HD SCREW 1/4 SS
#2 SPLIT LOCKWASHER SS
CGHV27200
Qty
1
1
1
1
3
2
2
3
1
1
2
2
1
2
1
1
4
4
1
CGHV27200-TB Demonstration Amplifier Circuit
Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
9
CGHV27200 Rev 0.1 PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: [phone]
Fax: [phone]
www.cree.com/rf