CGH40035F Datasheet, PDF (8/14 Pages) Cree, Inc – 35 W, RF Power GaN HEMT

CGH40035F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
RES, 1/16W, 0603, ≤5%, 5.1 OHMS
1
R2
RES, 1/16W, 0603, 1%, 100 OHMS
1
C6,C13,C19
CAP, 470PF, 5%, 100V, 0603
3
C16,C22
CAP, 33 UF, 20%, G CASE
2
C15,C21
CAP, 1.0UF, 100V, 10%, X7R, 1210
2
C8
CAP 10UF 16V TANTALUM
1
C1
CAP, 0.6pF, +/-0.05pF, 0603
1
C2
CAP, 1.2pF, +/-0.1pF, 0603
1
C10
CAP 4.7PF, +/- 0.25pF, ATC 100B
1
C4,C11,C17
CAP, 7.5pF, +/-0.1pF, 0603
3
C5,C12,C18,C30,C31
CAP, 47pF,+/-5%pF, 0603
5
C7,C14,C20
CAP,33000PF, 0805,100V, X7R
3
J2,J3
CONN SMA STR PANEL JACK RECP
2
J1
HEADER RT>PLZ .1CEN LK 9POS
1
-
PCB, RO4350B, Er = 3.48, h = 20 mil
1
Q1
CGH40035F
1
CGH40035F-AMP Demonstration Amplifier Circuit
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CGH40035F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: [phone]
Fax: [phone]
www.cree.com/rf