CCS020M12CM2 Datasheet, PDF (6/10 Pages) Cree, Inc – Six-Pack (Three Phase) Module

Typical Performance
0.3
0.25
0.2
Conditions:
T_J = 25 °C
V_DD = 600 V
R_G(ext) = 2.5 Ω
V_GS = -5/+20 V
L = 412 μH
0.15
E_Total
E_On
0.1
0.05
E_Off
0
0
5
10
15
20
25
30
35
40
45
Drain to Source Current, I_DS (A)
Figure 19. Inductive Switching Energy vs.
Drain Current For V_DS = 600V
1.4
Conditions:
T_J = 25 °C
1.2
V_DD = 800 V
I_DS = 20 A
V_GS = -5/+20 V
1.0
L = 412 μH
0.8
E_Total
E_On
0.6
0.4
E_Off
0.2
0.0
0
10
20
30
40
External Gate Resistor R_G(ext) (Ohms)
Figure 21.Inductive Switching Energy
vs. R_G(ext)
0.9
Conditions:
0.8
T_J = 25 °C
R_G(ext) = 2.5 Ω
0.7
I_DS = 20 A
V_GS = -5/+20 V
L = 412 μH
0.6
E_Total
0.5
E_On
0.4
0.3
0.2
0.1
E_Off
0.0
300
400
500
600
700
800
900
Drain to Source Voltage, V_DS (V)
Figure 23. Inductive Switching Energy vs.
V_DS
50
1000
6
CCS020M12CM2,Rev. -
0.8
Conditions:
0.7 ^{TJ = 25 °C}
V_DD = 800 V
R_G(ext) = 2.5 Ω
0.6 V_GS = -5/+20 V
L = 412 μH
0.5
0.4
E_Total
E_On
0.3
0.2
E_Off
0.1
0
0
5
10
15
20
25
30
35
40
45
Drain to Source Current, I_DS (A)
Figure 20. Inductive Switching Energy vs.
Drain Current For V_DS = 800V
0.8
Conditions:
0.7
I_DS = 20 A
V_DD = 800 V
R_G(ext) = 2.5 Ω
0.6
V_GS = -5/+20 V
L = 412 µH
0.5
E_Total
0.4
E_On
0.3
0.2
0.1
E_Off
0.0
0
25
50
75
100
125
150
175
Junction Temperature, T_J (°C)
Figure 22. Inductive Switching Energy vs.
Temperature
120
Conditions:
T_J = 25 °C
100
V_DD = 800 V
R_L = 40 Ω
V_GS = -5/+20 V
80
60
40
20
0
0
t_f
t_{d (off)}
t_r
t_{d (on)}
5
10 15 20 25 30 35 40 45 50
External Gate Resistor, R_G(ext) (Ohms)
Figure 24. Timing vs. R_G(ext)