SDB05S120 Datasheet, PDF (4/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

Typical Performance
141.04
121.02
101.00
8.08
6.06
4.04
2.0²
0.00
0₀20₂₀0₀40₄₀0₀ 6₆0₀₀08₈0₀₀0 1₁0₀0₀₀0
V_R R_Veve_Rrse₍V_Vol₎tage (V)
Figure 7. Typical Capacitance Stored Energy
11000000
1₁0₀₀0
T_J = 25°C
T_J = 110°C
100
1_1.E_E--₀0₅5 1₁E_.E-_-00₄4 1₁E_.E-_-00₃3 1₁E_.E-_-0₀₂2
t_pt(ps(s))
Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
1 ^0.5
0.3
0.1
100E-3 ^0.05
0.02
0.01
10E-3
SinglePulse
1E-3
1E-6
10E-6 100E-6
1E-3
10E-3 100E-3
1
Ti_Tm₍e_S, t_epc(₎s)
Figure 9. Transient Thermal Impedance
4
C4D05120A Rev. A