CGHV22100 Datasheet, PDF (4/11 Pages) Cree, Inc – 100 W, 1800-2200 MHz, GaN HEMT for LTE

Typical Performance

Figure 3. - Typical Gain, Drain Efficiency and ACLR vs Frequency
of CGHV2210^T0^ypm^icae^la^Gs^auⁱⁿre^,Dd^raiⁱnⁿ C^EfG^ficH^ieVⁿ2^c2^y1^a0^nd0-^AA^CM^LRP^vsA^.m^Frp^el^qi^ufi^eeⁿr^cC^y ircuit.
V_DS = ^o5^f0^thV_Ve,_DCI_DD^G_S=H5=^V020_V2._,15_I0D0A_DF,_=mP_0.A^e5_V^a_EAs,=^uPr2^eAdV5_EinW_=2C,_5G1_WHc^V,W_12c2C^1WD^00CM^FD-A^TMB,_AP_,APA^mAR_Rpl==^if7ie.7_5r.5_dCBid^rcB^uit.
50
-30
45
-31
40
-32
35
EFF
-33
30
-34
25
GAIN
20
15
-35
-36
ACLR
-37
10
5
0
1.8
Gain
EFF
ACLR
1.9
2
2.1
Frequency (GHz)
-38
-39
-40
2.2
CGHV22100 Power Dissipation De-rating Curve
50
45
40
440161 Package
440162 Package
35
30
Note 1
25
20
15
10
5
0
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature ( C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGHV22100 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: [phone]
Fax: [phone]
www.cree.com/rf