C2M0025120D Datasheet, PDF (3/10 Pages) Cree, Inc – N-Channel Enhancement Mode

Typical Performance
150
Conditions:
T_J = -55 °C
tp < 200 µs
120
V_GS = 20 V
V_GS = 18 V
90
60
30
V_GS = 16 V
V_GS = 14 V
V_GS = 12 V
V_GS = 10 V
0
0.0
2.5
5.0
7.5
10.0
Drain-Source Voltage, V_DS (V)
Figure 1. Output Characteristics TJ = -55 °C
150
Conditions:
T_J = 150 °C
tp < 200 µs
120
90
V_GS = 20 V
V_GS = 16 V
V_GS = 18 V
V_GS = 14 V
V_GS = 12 V
V_GS = 10 V
60
30
0
0.0
2.5
5.0
7.5
10.0
Drain-Source Voltage, V_DS (V)
Figure 3. Output Characteristics TJ = 150 °C
80
Conditions:
70
V_GS = 20 V
t_p < 200 µs
60
50
T_J = 150 °C
40
T_J = 25 °C
30
20
T_J = -55 °C
10
0
0
30
60
90
120
150
Drain-Source Current, I_DS (A)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
3
C2M0025120D Rev. B, 10-2015
150
Conditions:
T_J = 25 °C
tp < 200 µs
V_GS = 20 V
V_GS = 18 V
120
V_GS = 16 V
V_GS = 14 V
V_GS = 12 V
90
V_GS = 10 V
60
30
0
0.0
2.5
5.0
7.5
10.0
Drain-Source Voltage, V_DS (V)
Figure 2. Output Characteristics TJ = 25 °C
1.8
Conditions:
1.6
I_DS = 50 A
V_GS = 20 V
1.4
t_p < 200 µs
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0
25
50
75
100
125
150
Junction Temperature, T_J (°C)
Figure 4. Normalized On-Resistance vs. Temperature
60
Conditions:
I_DS = 50 A
50
t_p < 200 µs
40
V_GS = 14 V
30
V_GS = 16 V
V_GS = 18 V
20 ^VGS ^{= 20 V}
10
0
-50
-25
0
25
50
75
100
125
150
Junction Temperature, T_J (°C)
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage