C4D15120A Datasheet, PDF (2/5 Pages) Cree, Inc – Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier

Electrical Characteristics
Symbol Parameter
V_F
Forward Voltage
I_R
Reverse Current
Q_C
Total Capacitive Charge
C
Total Capacitance
Typ.
1.6
2.3
35
120
96
1200
70
50
Max.
1.8
3
200
300
Unit
V
μA
nC
pF
Test Conditions
I_F = 15 A T_J=25°C
I_F = 15 A T_J=175°C
V_R = 1200 V T_J=25°C
V_R = 1200 V T_J=175°C
V_R = 1200 V, I_F = 15A
di/dt = 200 A/μs
T_J = 25°C
V_R = 0 V, T_J = 25°C, f = 1 MHz
V_R = 400 V, T_J = 25˚C, f = 1 MHz
V_R = 800 V, T_J = 25˚C, f = 1 MHz
1. Note:This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Note
Symbol
Parameter
R_θJC
Thermal Resistance from Junction
to Case
Typ.
0.78
Max.
Unit
°C/W
Test Conditions
Note
Typical Performance
30
T_J=-55°C
T_J= 25°C
25
T_J= 75°C
T_J =125°C
T_J =175°C
20
15
10
5
5
4
3
2
T_J=-55°C
T_J= 25°C
T_J= 75°C
T_J =125°C
1
T_J =175°C
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V_F (V)
Figure 1. Forward Characteristics
0
200 400 600 800 1000 1200 1400 1600 1800
V_R (V)
Figure 2. Reverse Characteristics
2
C4D15120A Rev. A