C3D02065E Datasheet, PDF (2/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

Electrical Characteristics
Symbol Parameter
Typ. Max. Unit
Test Conditions
V_F
Forward Voltage
1.5
1.8
1.8
2.4
V
I_F = 2 AT_J=25°C
I_F = 2 AT_J=175°C
I_R
Reverse Current
10
50
20
100
μA
V_R = 650 V T_J=25°C
V_R = 650 V T_J=175°C
Q_C
Total Capacitive Charge
4.8
V_R = 650 V, I_F = 2A
nC
di/dt = 500 A/μs
T_J = 25°C
C
Total Capacitance
120
V_R = 0 V, T_J = 25°C, f = 1 MHz
12
pF
V_R = 200 V, T_J = 25˚C, f = 1 MHz
11
V_R = 400 V, T_J = 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
R_θJC
TO-252 Package Thermal Resistance from Junction to Case
Typ.
3.8
Unit
°C/W
Typical Performance
Note
4.40.0
1.0₁E-0₀5
3.35.5
T_J = 25°C
T_J = 75°C
3.30.0
T_J = 125°C
T_J = 175°C
2.25.5
2.20.0
1.₁5_.5
1.10.0
0.05.5
8.0E-086
6.0E-066
Current 25C
Current 75C
Current 125C^4.0E-046
Current 175C
2.0E-026
T_J = 25°C
T_J = 75°C
T_J = 125°C
T_J = 175°
Current 25C
Current 75C
Current 125C
Current 175C
00.0
0.0
0.0
0.51.01.52.02.5 3.0
0.5
1.0
1.5
2.0
2.5
3.0
V_F Forward Voltage (V)
Forward Voltage
Figure 1. Forward Characteristics
0.0E+000
0100200300400500 600 700800
0 100 200 300 400 500 600 700 800
V_R Reverse Voltage (V)
Reverse Bias (V)
Figure 2. Reverse Characteristics
2
C3D02065E Rev. -