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450TR5050M-S18000_16 Datasheet, PDF (2/5 Pages) Cree, Inc – General Illumination
Maximum Ratings at TA = 25°C Notes 1&3
DC Forward Current Note 4
Peak Forward Current (1/10 duty cycle @ 1 kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
LED Chip Storage Temperature
Recommended Die Sheet Storage Conditions
Electrostatic Discharge Threshold (HBM) Note 2
Electrostatic Discharge Classification (MIL-STD-883E) Note 2
CxxxTR5050M-Sxx000
200 mA
250 mA
150°C
5V
-40°C to +100°C
-40°C to +120°C
≤30°C / ≤85% RH
1000 V
Class 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 120 mA Note 3
Part Number
Forward Voltage (Vf, V)
C450TR5050M-Sxx000
Min.
2.7
Typ.
3.3
Max.
3.5
Reverse Current
[I(Vr=5V), μA]
Max.
2
Full Width Half Max
(λD, nm)
Typ.
20
Mechanical Specifications
CxxxTR5050M-Sxx000
Description
Dimension
Tolerance
P-N Junction Area (μm)
426 x 443
±35
Chip Area (μm)
500 x 500
±35
Chip Thickness (μm)
175
±15
Au Bond Pad Diameter Anode (μm)
90
±10
Au Bond Pad Thicknesses (μm)
1.0
±0.5
Au Bond Pad Diamater Cathode (μm)
98
±10
Bottom Contact Metal (um)
Max If (mA)
200
Bottom Area (μm)
Max Vf @Max If (V)
3.5
Bottom Contact Metal Thickness (μm)
Max Tj (Deg C)
150
Max Power (W)
0.7
273 x 273
320 x 320
3.0
±25
±45
±1.0
Notes:
1. Maximum
ratings
are
pacTkhageerm-daelpRenedseinstt.anTchee (aCb/oWv)e
ratings 1w0ere
determined 2u0sing
lamps
in
c3h0ip-on-MCPCB
(metal
core
PCB)
packages
for
characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific package to determine limitations.
Assembly processing temperature mIuf @st Tnaomt bexceed 325°C (<R5ths(ej-Ac)o=nds).
Tamb
Tamb
2. Product resistance to electrostatic disch2a0r0ge (ESD) according to t2h5e HBM is measur2e5d by simulating E2S5D using a rapid avalanche energy test (RAET).
The RAET procedures are designed to a2p0p0roximate the maximu1m43ESD ratings sho1w3n6.
129
3. All products conform to the listed minimu0m and maximum specif1ic5a0tions for electric1a5l0and optical cha1ra5c0teristics when assembled and operated at 120
mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values
expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages
(with Hysol OS4000 epoxy encapsulant and clear epoxy die attach). Optical characteristics measured in an integrating sphere using Illuminance E.
4. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be
designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance.
250
200
150
Rth j-a = 10 C/W
Rth j-a = 20 C/W
100
Rth j-a = 30 C/W
Rth j-a = 40 C/W
50
0
50
75
100
125
150
175
Ambient Temperature (C)
Copyright © 2011-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and TM and TR5050M are trademarks of Cree, Inc.
2
CPR3EX Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips