KIT8020CRD8FF1217P-1 Datasheet, PDF (1/2 Pages) Cree, Inc – CREE Silicon Carbide MOSFET Evaluation Kit

CREE Silicon Carbide MOSFET Evaluation Kit
KIT8020CRD8FF1217P-1
Features:
 Includes all the power stage parts needed to quickly
assemble a CREE MOSFET and diode based power
converter and get started with SiC devices.
 Easy to use assembly to evaluate CREE MOSFET and
Diode performance in a half bridge circuit.
 Easily configurable to different power conversion
topologies such as Buck or Boost configurations.
 Easy access to critical test points for measurement
including V_GS, V_DS and I_DS.
 Good layout example for properly driving MOSFET and
diode with minimal ringing.
 Gate drive schematic and layout reference for a TO-247
packaged CREE MOSFET.
 Comparative testing between CREE devices and IGBTs.
Some assembly Required
Description:
This Evaluation kit is meant to demonstrate the high performance of all CREE 1200V MOSFETs and CREE
Schottky diodes (SBD) in standard TO-247 package. The kit includes two Cree 80mOhm, 1200V CREE MOSFETs
and two 1200V 20A schottky diodes; a half bridge configured evaluation board that includes isolated gate drivers
and power supplies and all the other components needed to quickly assemble the half bridge power stage . The
basic block diagram and specifications are shown below. The assembly can be easily configured for several
topologies from the basic phase-leg configuration to several other common topologies as shown in the next
section. Additional topologies like H-bridge and 3-phase inverter are possible with two or more of the evaluation
kits.
Evaluation Board details
 900V max.
 10kW /w a cooling fan
 > 300 kHz
 +12V aux supply
 2 input PWM channels
Subject to change without notice.
www.cree.com
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