CXXXXT420-SXX00-A Datasheet, PDF (1/4 Pages) Cree, Inc – XThin® LEDs

XThin^® LEDs
CxxxXT420-Sxx00-A
Cree’s XThin LEDs are the next generation of solid-state LEDs that combine highly efficient InGaN materials with Cree’s
proprietary G•SiC^® substrate to deliver superior price/performance for high-intensity LEDs. These LED chips have a
geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a single wire bond
connection. These vertically structured LED chips are approximately 175 microns in height and require a low forward
voltage. Cree’s XT™ chips are tested for conformity to optical and electrical specifications and the ability to withstand
1000 V ESD. Applications for XThin LEDs include next-generation mobile appliances for use in their LCD backlights and
digital camera flash where brightness, sub-miniaturization, and low power consumption are required.
FEATURES
• XThin LED Performance
– 450 nm – 24 mW min.
• Low Forward Voltage
• Single Wire Bond Structure
• Class 2 ESD Rating
APPLICATIONS
• LCD Backlighting
• Digital Camera Flash for Mobile Appliance
• LED Video Displays
• Audio Product Display Lighting
CxxxXT420-Sxx00-A Chip Diagram
Top View
Bottom View
G•SiC LED Chip
420 x 420 μm
Gold Bond Pad
105 μm Diameter
Die Cross Section
Backside
Metalization
Cathode (-)
SiC Substrate
t = 175 µm
Anode (+)
Subject to change without notice.
www.cree.com