CXXXXT290-SXX00-X Datasheet, PDF (1/6 Pages) Cree, Inc – XThin® LEDs

XThin^® LEDs
CxxxXT290-Sxx00-x
Cree’s XThin LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED
chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a
single wire bond connection. These vertically structured LED chips are approximately 115 microns in height and
require a low forward voltage. Cree’s XT™ chips are tested for conformity to optical and electrical specifications
and the ability to withstand 1000V ESD. Applications for XThin include next-generation mobile appliances for use
in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption
are required.
FEATURES
• XThin LED Performance
– Blue
 XT-12™ – 12.0 mW min.
 XT-16™ – 16.0 mW min.
 XT-18™ – 18.0 mW min.
 XT-21™ – 21.0 mW min.
 XT-24™ – 24.0 mW min.
– Green – 7.0 mW min.
• Low Forward Voltage – 3.2 V Typical at 20 mA
• Class 2 ESD Rating
• Sn Contact for Low-Temp. Die Attach Methods
• Die Attach Options
– Flux Eutectic; Flux & Temperature (-C)
– Eutectic; Temperature & Pressure (-D)
APPLICATIONS
• SMT Packages
• Cellular Phone LCD Backlighting
• Digital Camera Flash
• Mobile Appliance Key Pads
– White LEDs
– Blue LEDs
• LED Video Displays
CxxxXT290-Sxx00-x Chip Diagram
Top View
Bottom View
G•SiC LED Chip
300 x 300 μm
Gold Bond Pad
105 μm Diameter
Bottom View for -C
Bottom View for -D
Die Cross Section
Backside
Contact
Metal
Cathode (-)
SiC Substrate
t = 115 µm
Anode (+)
Subject to change without notice.
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