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CXXXXB900-SX000-A Datasheet, PDF (1/4 Pages) Cree, Inc – XBright® Power Chip LED
XBright® Power Chip LED
CxxxXB900-Sx000-A
Cree’s XB™ power chip series of LEDs are the next generation of solid-state LED emitters that combine highly efficient
InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity
LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and
require only a single wire bond connection. These LEDs are useful in a broad range of applications such as outdoor
full-motion LED video signs, automotive lighting and white LEDs. Cree’s XB power chips are compatible with optical
power packages that employ proper thermal management.
FEATURES
• XBright LED Technology
• Larger “Power Chip” Design
• High Performance
– 90 mW min. (460 & 470 nm) Blue
– 60 mW min. (505 nm) Traffic Green
– 40 mW min. (527 nm) Green
• Single Wire Bond Structure
• AuSn Backside Metalization
APPLICATIONS
• General Illumination
– Automobile
– Aircraft
– Decorative Lighting
– Task Lighting
– Outdoor Illumination
• White LEDs
• Backlighting
• Traffic Signals
CxxxXB900-Sx000-A Chip Diagram
Top View
G•SiC LED Chip
900 x 900 μm
Width = 30 μm
Bond Pad
120 μm Diameter
Bottom View
Die Cross Section
764 μm
Contact Metal
SiC Substrate
h = 250 μm
InGaN
Cathode (-)
Anode (+)
Subject to change without notice.
www.cree.com