CVFD20065A Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

CVFD20065A
Silicon Carbide Schottky Diode
Z-Rec^® Rectifier
Features
• 650-Volt Schottky Rectifier
•
•
Reduced V_F for Improved Efficiency
High Humidity Resistance
• Zero Forward and Reverse Recovery Voltage
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on V_F
Benefits
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Power Inverters
• Motor Drives
• EV Chargers
• Power Factor Correction
• Server Power Supplies
Package
TO-220-2
PIN 1
PIN 2
Part Number
CVFD20065A
V_RRM
=
650 V
I_F (T_C=135˚C) = 26 A
Q_c
= 62 nC
CASE
Package
TO-220-2
Marking
CVFD20065
Maximum Ratings (T_C = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
V_RRM
Repetitive Peak Reverse Voltage
650
V
V_RSM
Surge Peak Reverse Voltage
650
V
V_DC
I_F
I_FRM
I_FSM
I_F,Max
P_tot
T_J , T_stg
DC Peak Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Forward Surge Current
Non-Repetitive Peak Forward Current
Power Dissipation
Operating Junction and Storage Temperature
TO-220 Mounting Torque
650
V
57
T_C=25˚C
26
A T_C=135˚C
20
T_C=149˚C
91
61.5
A
T_C=25˚C, t_P=10 ms, Half Sine Pulse
T_C=110˚C, t_P=10 ms, Half Sine Pulse
206
180
A
T_C=25˚C, t_P=10 ms, Half Sine Pulse
T_C=110˚C, t_P=10 ms, Half Sine Pulse
1400
1100
A
T_C=25˚C, t_P=10 ms, Pulse
T_C=110˚C, t_P=10 ms, Pulse
187.5
81
W
T_C=25˚C
T_C=110˚C
-55 to
+175
˚C
1
Nm M3 Screw
8.8 lbf-in 6-32 Screw
1
CVFD20065A Rev. B