CRF24060D Datasheet, PDF (1/8 Pages) Cree, Inc – 60 W SiC RF Power MESFET Die

CRF24060D
60 W SiC RF Power MESFET Die
Cree’s CRF24060 is a silicon carbide (SiC) RF power
Metal-Semiconductor Field-Effect Transistor (MESFET).
SiC has superior properties compared to silicon or
gallium arsenide, including higher breakdown voltage,
higher saturated electron drift velocity, and higher
thermal conductivity. SiC MESFETs offer greater power
density and wider bandwidths compared to Si and GaAs transistors.
FEATURES
APPLICATIONS
PN: _CRF24060D
• 13 dB Small Signal Gain at 1.5 GHz
• 60 W Typical P_1dB
• 48 V Operation
• High Breakdown Voltage
• High Temperature Operation
• Up to 5 GHz Operation
• High Efficiency
• Wideband Military Communications
• Secure Comms for Homeland Defense
• Class A, AB Amplifiers
• TDMA, EDGE, CDMA and W-CDMA
• Broadband Amplifiers
• MMDS
Packaging Information
• Bare die are shipped in Gel-Pak^® containers.
• Non-adhesive tacky membrane immobilizes die during
shipment.
Subject to change without notice.
www.cree.com/wireless