CRF24060 Datasheet, PDF (1/10 Pages) Cree, Inc – 60 W, SiC RF Power MESFET

PRELIMINARY
CRF24060
60 W, SiC RF Power MESFET
Cree’s CRF24060 is an unmatched silicon carbide (SiC) RF power Metal-
Semiconductor Field-Effect Transistor (MESFET). SiC has superior
properties compared to silicon or gallium arsenide, including higher
breakdown voltage, higher saturated electron drift velocity, and higher
thermal conductivity. SiC MESFETs offer greater efficiency, greater power
density, and wider bandwidths compared to Si and GaAs transistors.
FEATURES
APPLICATIONS
PackagPeNT:ypCeR:F2444006109F3
• 13 dB Small Signal Gain
• High Efficiency
• 50 W minimum P_1dB
• Up to 2400 MHz Operation
• 48 V Operation
• High Breakdown Voltage
• High Temperature Operation
• Wideband Military Communications
• Secure Comms for Homeland Defense
• Class A, A/B Amplifiers
• TDMA, EDGE, CDMA, W-CDMA
• Broadband Amplifiers
• MMDS
Typical Performance
• Drain Efficiency of 45% at 1500 MHz at 60 W P_OUT
• IMD -31 dBc at 1000 MHz at 50 W PEP
• 13 dB Small Signal Gain at 1500 MHz
• 60 W @ P_1dB at 1500 MHz
• 80 W P_3dB at 1500 MHz
Note: Measured in amplifier circuit CRF24060-TB at V_DS = 48 V, I_DQ = 2000 mA.
Subject to change without notice.
www.cree.com/wireless