CRF24010D Datasheet, PDF (1/8 Pages) Cree, Inc – 10 W SiC RF Power MESFET Die

PRELIMINARY
CRF24010D
10 W SiC RF Power MESFET Die
Cree’s CRF24010 is a silicon carbide (SiC) RF power Metal-Semiconductor
Field-Effect Transistor (MESFET). SiC has superior properties compared
to silicon or gallium arsenide, including higher breakdown voltage, higher
saturated electron drift velocity, and higher thermal conductivity. SiC
MESFETs offer greater power density and wider bandwidths compared
to Si and GaAs transistors.
FEATURES
APPLICATIONS
PN: _CRF24010D
• 15 dB Small Signal Gain
• 10 W Minimum P_1dB
• 48 V Operation
• High Breakdown Voltage
• High Temperature Operation
• Up to 5 GHz Operation
• High Efficiency
• Wideband Military Communications
• Secure Comms for Homeland Defense
• Class A, AB Amplifiers
• TDMA, EDGE, CDMA and W-CDMA
• Broadband Amplifiers
• MMDS
Packaging Information
• Bare die are shipped in Gel-Pak® containers.
• Non-adhesive tacky membrane immobilizes die during
shipment.
Subject to change without notice.
www.cree.com/wireless