CRF24010 Datasheet, PDF (1/10 Pages) Cree, Inc – 10 W, SiC RF Power MESFET

PRELIMINARY
CRF24010
10 W, SiC RF Power MESFET
Cree’s CRF24010 is an unmatched silicon carbide (SiC) RF power Metal-
Semiconductor Field-Effect Transistor (MESFET). SiC has superior
properties compared to silicon or gallium arsenide, including higher
breakdown voltage, higher saturated electron drift velocity, and higher
thermal conductivity. SiC MESFETs offer greater efficiency, greater power
density, and wider bandwidths compared to Si and GaAs transistors.
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CRF24010F
FEATURES
APPLICATIONS
• 15 dB Small Signal Gain
• High Efficiency
• 10 W minimum P_1dB
• Up to 2700 MHz Operation
• 48 V Operation
• High Breakdown Voltage
• High Temperature Operation
• Wideband Military Communications
• Secure Comms for Homeland Defense
• Class A, A/B Amplifiers
• TDMA, EDGE, CDMA, W-CDMA
• Broadband Amplifiers
• MMDS
Typical Performance
• Drain Efficiency of 45% at 1950 MHz
• IMD -31 dBc at 1950 MHz
• 15 dB Gain at 1950 MHz
Note: Measured in amplifier circuit CRF24010-TB at V_DS = 48 V, I_DQ = 500 mA.
Subject to change without notice.
www.cree.com/wireless