CPW4-1200S015B Datasheet, PDF (1/3 Pages) Cree, Inc – Silicon Carbide Schottky Diode Chip

CPW4-1200S015B–Silicon Carbide Schottky Diode Chip
Z-Rec^TM Rectifier
V_RRM = 1200 V
I_F = 15 A
Features
Chip Outline
Q_c = 96 nC
• 1200-Volt Schottky Rectifier
• Zero Reverse Recovery
• Zero Forward Recovery
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Swtitching
• Positive Temperature Coefficient on V_F
Part Number
CPW4-1200S015B
Anode
Al
Cathode
Ni/Ag
Package
Sawn on Foil
Marking
Wafer # on Foil
Maximum Ratings
Symbol Parameter
Value Unit
Test Conditions
V_RRM
Repetitive Peak Reverse Voltage
1200 V
V_RSM
Surge Peak Reverse Voltage
1300 V
V_DC
DC Blocking Voltage
1200 V
I_F(AVG)
Average Forward Current
15
A T_J=175˚C
I_FRM
Repetitive Peak Forward Surge Current
68
A T_C=25˚C, t_P=10 ms, Half Sine pulse
I_FSM
Non-Repetitive Peak Forward Surge Current 130
A T_C=25˚C, t_P=10 ms, Half Sine pulse
T_J , T_stg
Operating Junction and Storage Temperature
-55 to
+175
˚C
Note
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Subject to change without notice.
www.cree.com/power
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