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CPW4-1200S002B Datasheet, PDF (1/3 Pages) Cree, Inc – Silicon Carbide Schottky Diode Chip | |||
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CPW4-1200S002BâSilicon Carbide Schottky Diode Chip
Z-RecTM Rectifier
VRRM = 1200 V
IF(AVG) = 2 A
Features
Chip Outline
Qc = 15 nC
⢠1200-Volt Schottky Rectifier
⢠Zero Reverse Recovery
⢠Zero Forward Recovery
⢠High-Frequency Operation
⢠Temperature-Independent Switching Behavior
⢠Extremely Fast Swtitching
⢠Positive Temperature Coefficient on VF
Part Number
CPW4-1200S002B
Anode
Al
Cathode
Ni/Ag
Package
Sawn on Foil
Marking
Wafer # on Foil
Maximum Ratings
Symbol Parameter
Value Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
1200 V
VRSM
Surge Peak Reverse Voltage
1300 V
VDC
DC Blocking Voltage
1200 V
IF(AVG)
Average Forward Current
2
A TJ=175ËC
IFRM
Repetitive Peak Forward Surge Current
13
A TC=25ËC, tP=10 ms, Half Sine Wave
IFSM
Non-Repetitive Peak Forward Surge Current
19
A TC=25ËC, tP=10 ms, Half Sine Wave
TJ , Tstg
Operating Junction and Storage Temperature
-55 to
+175
ËC
Note
1
1
Subject to change without notice.
www.cree.com/power
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