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| CPW4-1200-S010B Datasheet, PDF (1/4 Pages) Cree, Inc – Silicon Carbide Schottky Diode Chip | |||
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CPW4-1200-S010B
Silicon Carbide Schottky Diode Chip
Z-Rec ® Rectifier
Features
⢠1.2kV Schottky Rectifier
⢠Zero Reverse Recovery
⢠Zero Forward Recovery
⢠High-Frequency Operation
⢠Temperature-Independent Switching Behavior
⢠Extremely Fast Switching
⢠Positive Temperature Coefficient on VF
Chip Outline
VRRM
= 1200 V
IF(AVG)
=
10 A
Qc
= 52 nC
Part Number
CPW4-1200-S010B
Die Size
2.26 x 2.26 mm2
Anode
Al
Cathode
Ni/Ag
Maximum Ratings
Symbol Parameter
Value Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
1200 V
VRSM
Surge Peak Reverse Voltage
1300 V
VR
DC Peak Blocking Voltage
IF
Continuous Forward Current
IFRM
Repetitive Peak Forward Surge Current
IFSM
Non-Repetitive Forward Surge Current
IF,Max
Non-Repetitive Peak Forward Current
TJ , Tstg Operating Junction and Storage Temperature
TProc
Maximum Processing Temperature
1. Assumes RθJC Thermal Resistance of 1.1ËC/W or less
1200 V
10
47
31.5
71
59.5
750
620
-55 to
+175
325
A TJ=175ËC
A
TC=25ËC, tP=10 ms, Half Sine Pulse
TC=110ËC, tP=10 ms, Half Sine Pulse
A
TC=25ËC, tP=10 ms, Half Sine Pulse
TC=110ËC, tP=10 ms, Half Sine Pulse
A
TC=25ËC, tP=10 ms, Pulse
TC=110ËC, tP=10 ms, Pulse
ËC
ËC 10 min. maximum
Subject to change without notice.
www.cree.com/power
Note
1
1
1
1
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