CPW3-1700S025 Datasheet, PDF (1/3 Pages) Cree, Inc – Silicon Carbide Schottky Diode Chip

CPW3-1700S025–Silicon Carbide Schottky Diode Chip
Z-Rec™ Rectifier
V_RRM = 1700 V
I_F(AVG) = 25 A
Features
Chip Outline
Q_c = 170 nC
• 1700-Volt Schottky Rectifier
• Zero Reverse Recovery
• Zero Forward Recovery
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on V_F
Part Number
CPW3-1700S025B
Anode
Al
Cathode
Ni/Ag
Package
Sawn on Foil
Marking
Wafer # on Foil
Maximum Ratings
Symbol Parameter
Value Unit
Test Conditions
V_RRM
V_RSM
V_DC
I_F(AVG)
I_FRM
I_FSM
T_J , T_stg
Repetitive Peak Reverse Voltage
1700
Surge Peak Reverse Voltage
DC Blocking Voltage
1700
1700
Average Forward Current
25
Repetitive Peak Forward Surge Current
82
43
Non-Repetitive Peak Forward Surge Current
117
84
Operating Junction and Storage Temperature
-55 to
+175
V
V
V
A T_J=175˚C
A
T_C=25˚C, t_P=10 ms, Half Sine Wave, D=1
T_C=110˚C, t_P=10 ms, Half Sine Wave, D=1
A
T_C=25˚C, t_P=10 ms, Half Sine Wave, D=1
T_C=110˚C, t_P=10 ms, Half Sine Wave, D=1
˚C
Electrical Characteristics
Symbol
Parameter
Typ. Max. Unit
Test Conditions
V_F
Forward Voltage
1.8
2
3.2
4
V
I_F = 25 AT_J=25°C
I_F = 25 AT_J=175°C
I_R
Reverse Current
20
100
100
400
μA
V_R = 1700 V T_J=25°C
V_R = 1700 V T_J=175°C
Q_C
Total Capacitive Charge
170
270
V_R = 1700 V, I_F = 25 A
nC
di/dt = 400 A/μs
T_J = 25°C
C
Total Capacitance
2250
200
pF
140
Note:
1. Assumes θ_J-C Thermal Resistance of 0.63˚C/W or less.
Subject to change without notice.
www.cree.com/power
V_R = 0 V, T_J = 25°C, f = 1 MHz
V_R = 200 V, T_J = 25˚C, f = 1 MHz
V_R = 400 V, T_J = 25˚C, f = 1 MHz
Note
1
1
Note
1