CPW3-1700S010 Datasheet, PDF (1/3 Pages) Cree, Inc – Silicon Carbide Schottky Diode Chip

CPW3-1700S010–Silicon Carbide Schottky Diode Chip
Z-Rec™ Rectifier
V_RRM = 1700 V
I_F(AVG) = 10 A
Features
Chip Outline
Q_c = 70 nC
• 1700-Volt Schottky Rectifier
• Zero Reverse Recovery
• Zero Forward Recovery
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on V_F
Part Number
CPW3-1700S010B
Anode
Al
Cathode
Ni/Ag
Package
Sawn on Foil
Marking
Wafer # on Foil
Maximum Ratings
Symbol Parameter
Value Unit
Test Conditions
Note
V_RRM
Repetitive Peak Reverse Voltage
1700
V
V_RSM
Surge Peak Reverse Voltage
1700
V
V_DC
DC Blocking Voltage
1700
V
I_F(AVG)
Average Forward Current
10
A T_J=175˚C
I_FRM
Repetitive Peak Forward Surge Current
40.5
22.5
A
T_C=25˚C, t_P=10 ms, Half Sine Wave, D=1
T_C=110˚C, t_P=10 ms, Half Sine Wave, D=1
1
I_FSM
Non-Repetitive Peak Forward Surge Current
54
36.5
A
T_C=25˚C, t_P=10 ms, Half Sine Wave, D=1
T_C=110˚C, t_P=10 ms, Half Sine Wave, D=1
1
T_J , T_stg
Operating Junction and Storage Temperature
-55 to
+175
˚C
Electrical Characteristics
Symbol
Parameter
V_F
Forward Voltage
I_R
Reverse Current
Typ.
1.7
3
10
50
Max.
2
3.5
50
200
Q_C
Total Capacitive Charge
70
110
880
C
Total Capacitance
80
60
Note:
1. Assumes θ_J-C Thermal Resistance of 1.06˚C/W or less.
Unit
V
μA
nC
pF
Test Conditions
I_F = 10AT_J=25°C
I_F = 10 AT_J=175°C
V_R = 1700 V T_J=25°C
V_R = 1700 V T_J=175°C
V_R = 1700 V, I_F = 10 A
di/dt = 400 A/μs
T_J = 25°C
V_R = 0 V, T_J = 25°C, f = 1 MHz
V_R = 200 V, T_J = 25˚C, f = 1 MHz
V_R = 400 V, T_J = 25˚C, f = 1 MHz
Subject to change without notice.
www.cree.com/power
Note
1