CPW3-0650-S004B Datasheet, PDF (1/3 Pages) Cree, Inc – Silicon Carbide Schottky Diode Chip

CPW3-0650-S004B–Silicon Carbide Schottky Diode Chip
Z-Rec^TM Rectifier
V_RRM = 650 V
I_F(AVG) = 4 A
Features
Chip Outline
Q_c = 8.5 nC
• 650-Volt Schottky Rectifier
• Zero Reverse Recovery
• Zero Forward Recovery
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Swtitching
• Positive Temperature Coefficient on V_F
Part Number
CPW3-0650-S004B
Anode
Al
Cathode
Ni/Ag
Package
Sawn on Foil
Marking
Wafer # on Foil
Maximum Ratings
Symbol Parameter
Value Unit
Test Conditions
Note
V_RRM
Repetitive Peak Reverse Voltage
650
V
V_RSM
Surge Peak Reverse Voltage
650
V
V_DC
DC Blocking Voltage
650
V
I_F(AVG)
Average Forward Current
4
A T_J=160˚C
I_FRM
Repetitive Peak Forward Surge Current
22
A T_C=25˚C, t_P=10 ms, Half Sine Wave, D=0.3
1
I_FSM
Non-Repetitive Peak Forward Surge Current 110
A T_C=25˚C, t_P=10 µs, Pulse
1
T_J , T_stg
Operating Junction and Storage Temperature
-55 to
+175
˚C
Subject to change without notice.
www.cree.com/power
1