CPW3-0600S004 Datasheet, PDF (1/3 Pages) Cree, Inc – Silicon Carbide Schottky Diode Chip

CPW3-0600S004–Silicon Carbide Schottky Diode Chip
Z-Rec^TM Rectifier
V_RRM = 600 V
I_F(AVG) = 4 A
Features
Chip Outline
Q_c = 8.5 nC
• 600-Volt Schottky Rectifier
• Zero Reverse Recovery
• Zero Forward Recovery
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Swtitching
• Positive Temperature Coefficient on V_F
Part Number
CPW3-0600S004B
Anode
Al
Cathode
NiV/Ag
Package
Sawn on Foil
Marking
Wafer # on Foil
Maximum Ratings
Symbol Parameter
Value Unit
Test Conditions
Note
V_RRM
Repetitive Peak Reverse Voltage
600
V
V_RSM
Surge Peak Reverse Voltage
600
V
V_DC
DC Blocking Voltage
600
V
I_F(AVG)
Average Forward Current
4
A T_J=175˚C
I_FRM
Repetitive Peak Forward Surge Current
22
A T_C=25˚C, t_P=10 ms, Half Sine Wave, D=0.3
1
I_FSM
Non-Repetitive Peak Forward Surge Current 110
A T_C=25˚C, t_P=10 µs, Pulse
1
T_J , T_stg
Operating Junction and Storage Temperature
-55 to
+175
˚C
Subject to change without notice.
www.cree.com/power
1