CPW2-1200-S050B Datasheet, PDF (1/3 Pages) Cree, Inc – Silicon Carbide Schottky Diode Chip

CPW2-1200S050–Silicon Carbide Schottky Diode Chip
Zero Recovery^® Rectifier
V_RRM = 1200 V
I_F(AVG) = 50 A
Features
Chip Outline
Q_c = 305 nC
• 1200-Volt Schottky Rectifier
• Zero Reverse Recovery
• Zero Forward Recovery
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on V_F
Part Number
CPW2-1200S050B
Anode
Al
Cathode
NiV/Ag
Package
Sawn on Foil
Marking
Wafer # on Foil
Maximum Ratings
Symbol Parameter
Value Unit
Test Conditions
Note
V_RRM
Repetitive Peak Reverse Voltage
1200 V
V_RSM
Surge Peak Reverse Voltage
1200 V
V_DC
DC Blocking Voltage
1200 V
I_F(AVG) Average Forward Current
50
A T_J=175˚C
I_FRM
Repetitive Peak Forward Surge Current
TBD
A T_C=25˚C, t_P=8.3 ms, Half Sine Wave
1
I_FSM
Non-Repetitive Peak Forward Surge Current
TBD
A T_C=25˚C, t_P=10 µs, Pulse
1
T_J , T_stg
Operating Junction and Storage Temperature
-55 to
+175
˚C
Subject to change without notice.
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1