CPW2-0650-S016B Datasheet, PDF (1/4 Pages) Cree, Inc – 650-Volt Schottky Rectifier

CPW2-0650-S016B
Silicon Carbide Schottky Diode Chip
Z-Rec^® Rectifier
Features
• 650-Volt Schottky Rectifier
• Zero Reverse Recovery
• Zero Forward Recovery
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on V_F
Chip Outline
V_RRM
= 650 V
I_F(AVG) = 16 A
Q_c = 44.5 nC
Part Number
CPW2-0650-S006B
Die Size
2.41 x 2.41
Anode
Al
Cathode
Ni/Ag
Maximum Ratings
Symbol Parameter
Value Unit
Test Conditions
V_RRM
Repetitive Peak Reverse Voltage
650
V
V_RSM
Surge Peak Reverse Voltage
650
V
V_R
DC Peak Blocking Voltage
I_F
Continuous Forward Current
I_FRM
Repetitive Peak Forward Surge Current
I_FSM
Non-Repetitive Peak Forward Surge Current
I_F,Max
Non-Repetitive Peak Forward Surge Current
dV/dt Diode dV/dt ruggedness
∫i²dt
i²t value
T_J , T_stg Operating Junction and Storage Temperature
650
V
39
18
16
66
46
162
150
1400
1200
200
131
112.5
-55 to
+175
T_C=25˚C
A T_C=135˚C
T_C=142˚C
A
T_C=25˚C, t_P = 10 ms, Half Sine Wave
T_C=110˚C, t_P = 10 ms, Half Sine Wave
A
T_C=25˚C, t_p = 10 ms, Half Sine Wave
T_C=110˚C, t_p = 10 ms, Half Sine Wave
A
T_C=25˚C, t_P = 10 µs, Pulse
T_C=110˚C, t_P = 10 µs, Pulse
V/ns V_R=0-600V
A²s
T_C=25˚C, t_P=10 ms
T_C=110˚C, t_P=10 ms
˚C
T_Proc
Maximum Processing Temperature
1. Assumes R_θJC Thermal Resistance of 1˚C/W or less
325
˚C 10 min. maximum
Subject to change without notice.
www.cree.com/power
Note
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