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CPW2-0650-S010B Datasheet, PDF (1/4 Pages) Cree, Inc – Silicon Carbide Schottky Diode Chip
CPW2-0650-S010B
Silicon Carbide Schottky Diode Chip
Z-Rec® Rectifier
Features
Chip Outline
• 650-Volt Schottky Rectifier
• Zero Reverse Recovery
• Zero Forward Recovery
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on VF
VRVRMRRM= =65605V0 V
IF IF (AVG=) =101A0 A
QcQc==252n5CnC
Part Number
CPW2-0650-S010B
Die Size
1.92 x 1.92 mm2
Anode
Al
Cathode
Ni/Ag
Maximum Ratings
Symbol Parameter
Value Unit
Test Conditions
Note
VRRM
Repetitive Peak Reverse Voltage
650
V
VRSM
Surge Peak Reverse Voltage
650
V
VDC
DC Blocking Voltage
650
V
IF
Continuous Forward Current
10
A TJ=175˚C
IFRM
Repetitive Peak Forward Surge Current
67
A TC=25˚C, tP=10 ms, Half Sine Wave, D=0.3
1
IFSM
Non-Repetitive Peak Forward Surge Current
250
A TC=25˚C, tP=10 µs, Pulse
1
TJ , Tstg
Operating Junction and Storage Temperature
-55 to
+175
˚C
TProc
Maximum Processing Temperature
325
˚C 10 min Maximum
1
CPW2-0650-S010B Rev. A