CPM2-1700-0045B Datasheet, PDF (1/7 Pages) Cree, Inc – Silicon Carbide Power MOSFET C2M MOSFET Technology

CPM2-1700-0045B
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
N-Channel Enhancement Mode
Features
Chip Outline
V_DS
I_D @ 25˚C
R_DS(on)
• High Blocking Voltage with Low On-Resistance
• High Speed Switching with Low Capacitances
• Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
• Higher System Efficiency
• Reduced Cooling Requirements
• Increased Power Density
• Increased System Switching Frequencyy
1700 V
72 A
45 mΩ
Applications
• Solar Inverters
• Switch Mode Power Supplies
• High Voltage DC/DC converters
• Motor Drive
• Pulsed Power Applications
Part Number
CPM2-1700-0045B
Die Size (mm)
4.08 x 7.35
Maximum Ratings (T_C = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
V_DSmax
V_GSmax
V_GSop
Drain - Source Voltage
Gate - Source Voltage (Dynamic)
Gate - Source Voltage (Static)
I_D
Continuous Drain Current
I_D(pulse) Pulsed Drain Current
T_J , T_stg Operating Junction and Storage Temperature
T_Proc Maximum Processing Temperature
Note (1): Assumes a R_θJC < 0.24 K/W
1700
-10/+25
-5/+20
72
48
160
-40 to
+150
325
V VGS = 0 V, ID = 100 μA
V ^{Absolute maximum values, AC (f >1 Hz)}
V Recommended operational values
V_GS =20 V, T_C = 25˚C
A
V_GS =20 V, T_C = 100˚C
Note 1
A _{Pulse width tP limited by Tjmax}
˚C
˚C 10 min. maximum
1
CPM2-1700-0045B Rev. A, 02-2016