CPM2-1200-0160B Datasheet, PDF (1/7 Pages) Cree, Inc – Silicon Carbide Power MOSFET C2M MOSFET Technology

V_DS
1200 V
CPM2-1200-0160B
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
I_D @ 25˚C
R_DS(on)
19 A
160 mΩ
N-Channel Enhancement Mode
Features
Chip Outline
• New C2M SiC MOSFET technlogy
• High Blocking Voltage with Low On-Resistance
• High Speed Switching with Low Capacitances
• Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
• Higher System Efficiency
• Reduced Cooling Requirements
• Increased Power Density
• Increased System Switching Frequency
Applications
• Solar Inverters
• Switch Mode Power Supplies
• High Voltage DC/DC Converters
• LED Lighting Power Supplies
Part Number
CPM2-1200-0160B
Die Size (mm)
2.39 × 2.63
Maximum Ratings (T_C = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
V_DSmax
V_GSmax
V_GSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
I_D
Continuous Drain Current
1200
V VGS = 0 V, ID = 100 μA
-10/+25 V Absolute maximum values
-5/+20 V Recommended operational values
19
12.5
V_GS = 20 V, T_C = 25˚C
A
V_GS = 20 V, T_C = 100˚C
I_D(pulse) Pulsed Drain Current
T_J , T_stg Operating Junction and Storage Temperature
T_L
T_Proc
Solder Temperature
Maximum Processing Temperature
40
-55 to
+150
260
325
A Pulse width t_P limited by T_jmax
˚C
˚C 1.6mm (0.063”) from case for 10s
˚C 10 min. maximum
Note
Note (1): Assumes a R_θJC < 0.90 K/W
1
CPM2-1200-0160B Rev. A