CPM2-1200-0080B Datasheet, PDF (1/6 Pages) Cree, Inc – High Speed Switching with Low Capacitances

V_DS
1200 V
CPM2-1200-0080B
Silicon Carbide Power MOSFET
TM
Z-FET MOSFET
I_D @ 25˚C
R_DS(on)
31.6 A
80 mΩ
N-Channel Enhancement Mode
Features
Package
• High Speed Switching with Low Capacitances
• High Blocking Voltage with Low R_DS(on)
• Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
• Higher System Efficiency
• Reduced Cooling Requirements
• Increased System Switching Frequency
Applications
• Solar Inverters
• High Voltage DC/DC Converters
• Motor Drives
• Switch Mode Power Supplies
• UPS
Part Number
CPM2-1200-0080B
Package
Die
Maximum Ratings (T_C = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
I_{DS (DC)} Continuous Drain Current
I_{DS (pulse)} Pulsed Drain Current
31.6
20
60
V_GS@20 V, T_C = 25˚C
A
V_GS@20 V, T_C = 100˚C
A ^{Pulse width tP limited by Tjmax}
T_C = 25˚C
V_GS Gate Source Voltage
-10/+25 V
T_J , T_stg Operating Junction and Storage Temperature
-55 to
+150
˚C
T_L
Solder Temperature
260
˚C
Note 1: Assumes a R_θJC < 0.60 K/W
f
Note
Note 1
1
CPM2-1200-0080B Rev. -