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| CPM2-1200-0025B Datasheet, PDF (1/7 Pages) Cree, Inc – Silicon Carbide Power MOSFET C2M MOSFET Technology | |||
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CPM2-1200-0025B
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
N-Channel Enhancement Mode
Features
Chip Outline
VDS
ID @ 25ËC
RDS(on)
⢠High Blocking Voltage with Low On-Resistance
⢠High Speed Switching with Low Capacitances
⢠Easy to Parallel and Simple to Drive
⢠Avalanche Ruggedness
⢠Resistant to Latch-Up
⢠Halogen Free, RoHS Compliant
Benefits
⢠Higher System Efficiency
⢠Reduced Cooling Requirements
⢠Increased Power Density
⢠Increased System Switching Frequencyy
1200 V
98 A
25 mâ¦
Applications
⢠Solar Inverters
⢠Switch Mode Power Supplies
⢠High Voltage DC/DC converters
⢠Battery Chargers
⢠Motor Drive
⢠Pulsed Power Applications
Part Number
CPM2-1200-0025B
Die Size (mm)
4.04 x 6.44
Maximum Ratings (TC = 25 ËC unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID
Continuous Drain Current
ID(pulse) Pulsed Drain Current
TJ , Tstg Operating Junction and Storage Temperature
TProc Maximum Processing Temperature
Note (1): Assumes a RθJC < 0.27 K/W
1200
-10/+25
-5/+20
98
71
250
-40 to
+175
325
V VGS = 0 V, ID = 100 μA
V Absolute maximum values, AC (f >1 Hz)
V Recommended operational values
VGS =20 V, TC = 25ËC
A
VGS =20 V, TC = 100ËC
A Pulse width tP limited by Tjmax
Note 1
ËC
ËC 10 min. maximum
1
CPM2-1200-0025B Rev. C, 01-2016
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