CMPA5585025D Datasheet, PDF (1/7 Pages) Cree, Inc – 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier

CMPA5585025D
25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier
Cree’s CMPA5585025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based
monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or
gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher
thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to
Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach
enabling very wide bandwidths to be achieved.
Typical Performance Over 5.5-8.5 GHz (T_C = 25˚C)
Parameter
Small Signal Gain
P_OUT @ P_IN = 24 dBm
Power Gain @ P_IN = 24 dBm
PAE @ P_IN = 24 dBm
5.5 GHz
38
39
22
41
6.5 GHz
31
43
22
43
7.5 GHz
30
37
22
37
8.5 GHz
28
47
23
45
Units
dB
W
dB
%
Features
Applications
• 30 dB Small Signal Gain
• 40 W Typical P_SAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• Size 0.142 x 0.188 x 0.004 inches
• Point to Point Radio
• Communications
• Test Instrumentation
• EMC Amplifier Drivers
Subject to change without notice.
www.cree.com/wireless
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