CMPA2735075D Datasheet, PDF (1/7 Pages) Cree, Inc – 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

CMPA2735075D
75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier
Cree’s CMPA2735075D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based
monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or
gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher
thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to
Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach
enabling very wide bandwidths to be achieved.
Typical Performance Over 2.7-3.5 GHz (T_C = 25˚C)
Parameter
2.7 GHz 2.9 GHz 3.1 GHz 3.3 GHz 3.5 GHz Units
Small Signal Gain
28
30
30
29
28
dB
Saturated
Output
Power,
P1
SAT
67
85
101
103
94
W
Power
Gain
@
P1
SAT
22
24
25
25
24
dB
PAE
@
P1
SAT
48
59
61
61
61
%
Note¹: P_SAT is defined as the RF output power where the device starts to draw positive gate current in the range of 2-8 mA.
Features
Applications
• 28 dB Small Signal Gain
• 80 W Typical P_SAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• Size 0.197 x 0.174 x 0.004 inches
• Civil and Military Pulsed Radar
Amplifiers
Subject to change without notice.
www.cree.com/wireless
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