CMPA2560025F Datasheet, PDF (1/10 Pages) Cree, Inc – CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier

CMPA2560025F
25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier
Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit
(MMIC). GaN has superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher saturated
electron drift velocity and higher thermal conductivity. GaN HEMTs
also offer greater power density and wider bandwidths compared to
Si and GaAs transistors. This MMIC contains a two-stage reactively
matched amplifier enabling very wide bandwidths to be achieved in
a small footprint screw-down package featuring a Copper-Tungsten
heat-sink.
PacPkNa:geCMTyPpAe2:576800002159F
Typical Performance Over 2.5-6.0 GHz (T_C = 25˚C)
Parameter
2.5 GHz
4.0 GHz
6.0 GHz
Units
Gain
27.5
24.3
23.1
dB
Saturated
Output
Power,
P1
SAT
35.8
37.5
25.6
W
Power Gain @ P_OUT 43 dBm
23.1
20.9
16.3
dB
PAE @ P_OUT 43 dBm
31.5
32.8
30.7
%
Note¹: P_SAT is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA.
Features
Applications
• 24 dB Small Signal Gain
• 25 W Typical P_SAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• Ultra Broadband Amplifiers
• Fiber Drivers
• Test Instrumentation
• EMC Amplifier
Drivers
Subject to change without notice.
www.cree.com/rf
Figure _1.
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