CGHV96100F2 Datasheet, PDF (1/13 Pages) Cree, Inc – 100 W, 7.9 - 9.6 GHz, 50-ohm, Input

CGHV96100F2
100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
Cree’s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET
offers excellent power added efficiency in comparison to other technologies. GaN
has superior properties compared to silicon or gallium arsenide, including higher
breakdown voltage, higher saturated electron drift velocity and higher thermal
conductivity. GaN HEMTs also offer greater power density and wider bandwidths
compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged
package for optimal electrical and thermal performance.
PackPaNg:eCTGyHpVe:9464100201F02
Typical Performance Over 8.4-9.6 GHz (T_C = 25˚C)
Parameter
8.4 GHz 8.8 GHz 9.0 GHz 9.2 GHz 9.4 GHz
Linear Gain
12.7
12.4
12.7
13.1
13.1
Output Power
151
147
150
152
140
Power Gain
10.8
10.6
10.7
10.7
10.5
Power Added Efficiency
44
42
44
43
45
Note: Measured in CGHV96100F2-AMP (838179) under 100 µS pulse width, 10% duty, Pin 41.0 dBm (12.6 W)
9.6 GHz
12.4
131
10.2
45
Units
dB
W
dB
%
Features
• 8.4 - 9.6 GHz Operation
• 145 W P_OUT typical
• 10 dB Power Gain
• 45 % Typical PAE
• 50 Ohm Internally Matched
• <0.3 dB Power Droop
Applications
• Marine Radar
• Weather Monitoring
• Air Traffic Control
• Maritime Vessel Traffic Control
• Port Security
Subject to change without notice.
www.cree.com/rf
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