CGHV96050F1 Datasheet, PDF (1/14 Pages) Cree, Inc – 50 W, 7.9 - 9.6 GHz, 50-ohm, Input

CGHV96050F1
50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET
offers excellent power added efficiency in comparison to other technologies. GaN
has superior properties compared to silicon or gallium arsenide, including higher
breakdown voltage, higher saturated electron drift velocity and higher thermal
conductivity. GaN HEMTs also offer greater power density and wider bandwidths
compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged
package for optimal electrical and thermal performance.
PackPaNg:eCTGyHpVe:9464005201F01
Typical Performance Over 7.9-8.4 GHz (T_C = 25˚C)
Parameter
7.9 GHz 8.0 GHz 8.1 GHz 8.2 GHz 8.3 GHz 8.4 GHz
Units
Linear Gain
17.0
16.7
16.4
15.9
15.2
14.6
dB
Output Power
22.4
28.2
28.2
31.6
31.6
31.6
W
Power Gain
15.6
15.0
15.1
14.5
14.0
13.2
dB
Power Added Efficiency
30
37
37
39
38
37
%
Note: Measured at -30 dBc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.2
Features
• 7.9 - 8.4 GHz Operation
• 80 W P_OUT typical
• >13 dB Power Gain
• 33 % Typical Linear PAE
• 50 Ohm Internally Matched
• <0.1 dB Power Droop
Applications
• Satellite Communication
• Terrestrial Broadband
Subject to change without notice.
www.cree.com/rf
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