CGHV60170D Datasheet, PDF (1/7 Pages) Cree, Inc – 170 W, 6.0 GHz, 50V GaN HEMT Die

CGHV60170D
170 W, 6.0 GHz, 50V GaN HEMT Die
Cree’s CGHV60170D is a gallium nitride (GaN) High
Electron Mobility Transistor (HEMT). GaN has superior
properties compared to silicon or gallium arsenide,
including higher breakdown voltage, higher saturated electron drift
velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider
PN: _CGHV60170D
bandwidths compared to Si and GaAs transistors.
FEATURES
• 18 dB Typical Small Signal Gain at 4 GHz
• 17 dB Typical Small Signal Gain at 6 GHz
• 65% Typical Power Added Efficiency
• 170 W Typical P_SAT
• 50 V Operation
• High Breakdown Voltage
• Up to 6 GHz Operation
APPLICATIONS
• Broadband amplifiers
• Tactical communications
• Satellite communications
• Industrial, Scientific, and Medical ampli-
fiers
• Class AB, Linear amplifiers suitable for
OFDM, W-CDMA, LTE, EDGE, CDMA
waveforms
Packaging Information
• Bare die are shipped on tape or in Gel-Pak® containers.
• Non-adhesive tacky membrane immobilizes die during
shipment.
Subject to change without notice.
www.cree.com/rf
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