CGHV60075D5 Datasheet, PDF (1/7 Pages) Cree, Inc – 19 dB Typical Small Signal Gain at 4 GHz

CGHV60075D5
75 W, 6.0 GHz, GaN HEMT Die
Cree’s CGHV60075D5 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN
has superior properties compared to silicon or gallium arsenide, including higher breakdown
voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs
offer greater power density and wider bandwidths compared to Si and GaAs transistors.
FEATURES
• 19 dB Typical Small Signal Gain at 4 GHz
• 17 dB Typical Small Signal Gain at 6 GHz
• 65% Typical Power Added Efficiency at 4 GHz
• 60% Typical Power Added Efficiency at 6 GHz
• 75 W Typical P_SAT
• 50 V Operation
• High Breakdown Voltage
• Up to 6 GHz Operation
APPLICATIONS
• 2-Way Private Radio
• Broaband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Packaging Information
• Bare die are shipped on tape or in Gel-Pak® containers.
• Non-adhesive tacky membrane immobilizes die during shipment.
Subject to change without notice.
www.cree.com/rf
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