CGHV60075D Datasheet, PDF (1/7 Pages) Cree, Inc – 75 W, 6.0 GHz, GaN HEMT Die

CGHV60075D
75 W, 6.0 GHz, GaN HEMT Die
Cree’s CGHV60075D is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT). GaN has superior properties compared to silicon or gallium arsenide, including
higher breakdown voltage, higher saturated electron drift velocity, and higher thermal
conductivity. GaN HEMTs offer greater power density and wider bandwidths compared
to Si and GaAs transistors.
FEATURES
APPLICATIONS
• 18 dB Typical Small Signal Gain at 4 GHz
• 17 dB Typical Small Signal Gain at 6 GHz
• 65% Typical Power Added Efficiency at 4 GHz
• 60% Typical Power Added Efficiency at 6 GHz
• 75 W Typical P_SAT
• 50 V Operation
• High Breakdown Voltage
• Up to 6 GHz Operation
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
Packaging Information
• Bare die are shipped on tape or in Gel-Pak® containers.
• Non-adhesive tacky membrane immobilizes die during
shipment.
Subject to change without notice.
www.cree.com/rf
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