CGHV60040D Datasheet, PDF (1/7 Pages) Cree, Inc – 40 W, 6.0 GHz, GaN HEMT Die

CGHV60040D
40 W, 6.0 GHz, GaN HEMT Die
Cree’s CGHV60040D is a gallium nitride
(GaN) High Electron Mobility Transistor
(HEMT). GaN has superior properties
compared to silicon or gallium arsenide, including higher
breakdown voltage, higher saturated electron drift velocity, and higher thermal
PN: _CGHV60040D
conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.
FEATURES
• 18 dB Typical Small Signal Gain at 4 GHz
• 17 dB Typical Small Signal Gain at 6 GHz
• 65% Typical Power Added Efficiency
• 40 W Typical P_SAT
• 50 V Operation
• High Breakdown Voltage
• Up to 6 GHz Operation
APPLICATIONS
• Cellular Infrastructure
• Class AB, Linear amplifiers suitable for
OFDM, W-CDMA, LTE, EDGE, CDMA
waveforms
Packaging Information
• Bare die are shipped on tape or in Gel-Pak® containers.
• Non-adhesive tacky membrane immobilizes die during
shipment.
Subject to change without notice.
www.cree.com/rf
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