CGHV59350 Datasheet, PDF (1/12 Pages) Cree, Inc – 350 W, 5200 - 5900 MHz, 50-Ohm Input

PRELIMINARY
CGHV59350
350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems
Cree’s CGHV59350 is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV59350 ideal for 5.2 - 5.9 GHz C-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package, type 440217 and 440218.
Package
Type:
PN:
440217
CGHV59350
and ₄₄₀₂₁₈
Typical Performance Over 5.2 - 5.9 GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
5.2 GHz
5.55 GHz
5.9 GHz
Units
Output Power
440
445
490
W
Gain
10.5
10.5
11
dB
Drain Efficiency
59
54
55
%
Note:
Measured in the CGHV59350-TB under 100 μs pulse width, 10% duty cycle, P_IN = 46 dBm
Features
• 5.2 - 5.9 GHz Operation
• 450 W Typical Output Power
• 10.5 dB Power Gain
• 55% Typical Drain Efficiency
• 50 Ohm Internally Matched
• <0.3 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
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