CGHV59070 Datasheet, PDF (1/10 Pages) Cree, Inc – 70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT

PRELIMINARY
CGHV59070
70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT
Cree’s CGHV59070 is an internally matched gallium nitride (GaN) high electron mobility transistor
(HEMT). The CGHV59070, operating from a 50 volt rail, offers a general purpose, broadband
solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high
gain and wide bandwidth capabilities making the CGHV59070 ideal for linear and compressed
amplifier circuits. The transistor is available in a flange and pill package.
PNP’sa: ^{cCkGaHgeV5T9y0p7e:04F,4C0G22H4V,5494007107P0}
Typical Performance Over 4.8 - 5.9 GHz (T_C = 25˚C)
Parameter
4.8 GHz 5.0 GHz 5.2 GHz 5.4 GHz 5.6 GHz
Power Gain at 50 V
13.7
14.2
14.5
14.6
14.3
Output Power at 50 V
84
93
101
102
95
Drain Efficiency at 50 V
55
56
57
56
54
Note: Measured in CGHV59070F-AMP (838269) under 100 µS pulse width,10% duty, Pin = 35.5 dBm (3.5 W)
5.8 GHz
13.7
84
50
5.9 GHz
13.3
76
48
Units
dB
W
%
Features
• 4.4 - 5.9 GHz Operation
• 90 W P_OUT typical at 50 V
• 14 dB Power Gain
• 55 % Drain Efficiency
• Internally Matched
Applications
• Marine Radar
• Weather Monitoring
• Air Traffic Control
• Maritime Vessel Traffic Control
• Port Security
• Troposcatter Communications
• Beyond Line of Sight - BLOS
• Satellite Communications
Subject to change without notice.
www.cree.com/rf
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