CGHV50200F Datasheet, PDF (1/15 Pages) Cree, Inc – 200 W, 4400 - 5000 MHz, 50-Ohm Input

CGHV50200F
200 W, 4400 - 5000 MHz, 50-Ohm Input/Output Matched, GaN HEMT
Cree’s CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities, which
makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0 GHz C-Band SatCom
applications and Beyond Line of Sight. The GaN HEMT is matched to 50 ohm, for ease of use.
It is designed for CW, pulse, and linear mode of power amplifier operation. The transistor is
supplied in a ceramic/metal flange package, type 440215.
PN:
Package
TCyGpHeV: _45400220105F
Typical Performance Over 4.4-5.0 GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
4.4 GHz
4.6 GHz
4.8 GHz
Small Signal Gain
14.9
14.9
14.9
CW Output Power₁
173
177
170
Output Power₂
100
100
126
Power Gain₂
11.4
11.6
11.0
Power Added Efficiency₂
49
47
48
5.0 GHz
15.1
166
101
11.8
48
1_{Note: Measured CW in the CGHV50200F-AMP at PIN = 43 dBm}
2_{Note: Measured at -30 dBc, 1.6 MHz from carrier, in the CGHV50200F-AMP1 under OQPSK modulation, 1.6 Msps, PN23,}
Alpha Filter = 0.2.
Units
dB
W
W
dB
%
Features
• 4.4 - 5.0 GHz Operation
• 180 W Typical P_SAT
• 11.5 dB Typical Power Gain
• 48% Typical Power Efficiency
• 50 Ohm Internally Matched
Applications
• Troposcatter Communications
• Beyond Line of Sight – BLOS
• Satellite Communications
Subject to change without notice.
www.cree.com/rf
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