CGHV40320D Datasheet, PDF (1/7 Pages) Cree, Inc – 320 W, 4.0 GHz, GaN HEMT Die

CGHV40320D
320 W, 4.0 GHz, GaN HEMT Die
Cree’s CGHV40320D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN
has superior properties compared to silicon or gallium arsenide, including higher breakdown
voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs
offer greater power density and wider bandwidths compared to Si and GaAs transistors.
FEATURES
• 19 dB Typical Small Signal Gain at 4 GHz
• 65% Typical Power Added Efficiency
• 320 W Typical P_SAT
• 50 V Operation
• High Breakdown Voltage
• Up to 4 GHz Operation
APPLICATIONS
• Broadband amplifiers
• Tactical communications
• Satellite communications
• Industrial, Scientific, and Medical ampli-
fiers
• Class AB, Linear amplifiers suitable for
OFDM, W-CDMA, LTE, EDGE, CDMA
waveforms
Packaging Information
• Bare die are shipped on tape or in Gel-Pak® containers.
• Non-adhesive tacky membrane immobilizes die during
shipment.
Subject to change without notice.
www.cree.com/rf
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